PART |
Description |
Maker |
EPG4012J |
1000Base-T Module DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
EPG4011J-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
6723 |
LAN 10 BASE-T / 100 BASE-T Single TX Transformer
|
FILTRAN[Filtran LTD]
|
CM40 CM949 CM1818 CM48 CM1873 CM1800 CM750 CM42 CM |
Bayonet Base, Screw Base
|
Visual Communications Company Visual Communications Compa... Visual Communications C...
|
2SA733 |
Collector-Base Voltage: VCBO=-60V Emitter to base voltage VEBO -5.0 V
|
TY Semiconductor Co., Ltd
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
SSP-01TWB3SW12 SSP-01TWB3SWB12 |
LED MINIATURE WEDGE BASE, YELLOW, MILKY WHITE DIFFUSED ELECTRO-OPTICAL CHARATERISTICS LED MINATURE WEDGE BASE LAMP
|
LUMEX INC.
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor POWEREX[Powerex Power Semiconductors]
|
BDS12IG BDS10IG BDS11IG |
Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN澶?欢????朵?绠?TO257???灏??)) SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶体TO257金属封装)) 硅npn型Epitiaxial基地晶体TO257金属包(npn型外延型硅晶体管TO257金属封装))
|
SEME-LAB[Seme LAB] Semelab(Magnatec) TT electronics Semelab Limited
|